Triode/MOS tube/transistor/module

NPN Vo=50V Io=0.8A PD=0.2W R1=10K R2=10K

MOS transistor P-channel drain-source voltage (Vdss): 200V Continuous drain current (Id): 11A Power (Pd): 125W On-resistance (RDS(on)@Vgs,Id): 500mΩ@10V, 6.6A Threshold voltage (Vgs(th)@Id): 4V@250μA P-channel, -200V, -11A, 500mΩ@-10V

N-channel, VDSS withstand voltage 60V, ID current 300mA, RDON on-resistance 2R@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.9V,

3A 30V SOT-23