Triode/MOS tube/transistor/module

This complementary dual device uses a small encapsulation (2 x 2 mm) and low RDS(on) MOSFETs to achieve the smallest footprint and improve circuit efficiency. The low RDS(on) performance is ideal for single-cell or dual-cell Li-ion battery powered devices such as cell phones, media players, digital cameras and PDAs.

45V, 500mA PNP general purpose transistor

MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.35-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 50