Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, DFN-8 5*6, N channel, withstand voltage: 100V, current: 45A, 10V internal resistance (Max): 0.018Ω, 4.5V internal resistance (Max): 0.025Ω, power : 80W

NPN Vceo=160V Ic=1A PC=1W

Maximum input voltage (V) 7 Voltage between collector and emitter (V) 12 Collector current peak value (mA) 500 Total emitter current (mA) 500 Working temperature -20～+85 Function description Eight-way Darlington Tube array driver circuit Eight-way Darlington transistor array driver circuit Application fields Relay driver, lamp driver, display driver Relay driver, lamp driver, display driver

MOSFETs

2 N-channel, 30V, 220mA, 13Ω@2.5V

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100mA Power (Pd): 150mW On-Resistance (RDS(on)@Vgs,Id): 8Ω@4V, 10mA Threshold Voltage ( Vgs(th)@Id): 1.5V@100uA

Configuration Dual+ESD Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 7.5 VGS(th)(v) 0.7 RDS(ON)(m?)@4.265V 11.5 Qg(nC)@ 4.5V 13.5 QgS(nC) 1.5 Qgd(nC) 5.8 Ciss(pF) 900 Coss(pF) 175 Crss(pF) 160