Triode/MOS tube/transistor/module

800V 8A

N-channel, 600V, 3.6A, 2.2Ω@10V

Dual P-channel, -40V, -8A, 0.027Ω@-10V

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

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N-channel 100V 97A

Type P Drain-Source Voltage (Vdss) - 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 205 Input Capacitance (Ciss) 1050 Reverse Transfer Capacitance Crss (pF) 40 Gate Charge (Qg ) 20.9