Triode/MOS tube/transistor/module

N-channel, 60V, 210A, 3mΩ@10V

NPN 40V 600mA

P-channel, -60V, -50A, 20mΩ@10V

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN, Vceo=150V, Ic=10A

The combination of low saturation voltage and high gain makes this bipolar transistor ideal for power-saving high-speed switching applications.

N-channel, 600V, 10A, 750mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.6A Power (Pd): 1.2W On-Resistance (RDS(on)@Vgs,Id): 20mΩ@10V, 5.6A Threshold voltage (Vgs(th)@Id): 0.9V@250uA Gate charge (Qg@Vgs): 17nC@10V Input capacitance (Ciss@Vds): 0.63nF@15V , Vds=30V Id=5.6A Rds=20mΩ , Working temperature: -55℃~+150℃@(Tj);