Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 30A Power (Pd): 59W On-Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 27nC@10V Input capacitance (Ciss@Vds): 1.12nF@15V Operating temperature: -55℃~+150℃@(Tj)

MOSFET Type P+P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.65/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 18

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 1.5-3 On-Resistance RDS(ON) (mΩ) 3.8/4.6 Continuous Drain Current ID (A) 85

N-channel, 20V, 6A, 27mΩ@4.5V

PNP, Vceo=-15V, Ic=-5A

NPN

The excellent gain linearity and safe operating area performance of this bipolar power transistor make it suitable for high-fidelity audio amplifier output stages and other linear applications.