Triode/MOS tube/transistor/module

MOSFET Type N Drain-Source Voltage (Vdss) (V) 500 Threshold Voltage VGS ±30 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 1250/1500 Continuous Drain Current ID (A) 5

20V/6.3A N-channel

YJS2308A-F2-0000HF

650V

N-channel, 100V, 8.8A, 16mΩ@10V

N-channel, 60V, 3A, 105mΩ@10V

N-channel, 100V, 14A, 68mΩ@10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 160@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: -55℃~+150℃@(Tj)