Triode/MOS tube/transistor/module

PNP, Vceo=-60V, Ic=-600mA

MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-3 On-Resistance RDS(ON) (mΩ) 9/11.5 Continuous Drain Current ID (A) 20

Vceo=-50V, Ic=-150mA

N channel 60V49A 13m

Gear position: 100-200

Configuration Dual Type P-Ch VDS(V) -15 VGS(V) 8 ID(A)Max. -4.6 VGS(th)(v) -0.62 RDS(ON)(m?)@4.139V 47 Qg(nC) @4.5V 9.5 QgS(nC) 1.4 Qgd(nC) 2.3 Ciss(pF) 781 Coss(pF) 98 Crss(pF) 96

NPN, Vceo=50V, Ic=3A

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N-channel, 20V, 2.3A