Triode/MOS tube/transistor/module

Power MOSFET -20 V, -4.1 A Dual P-Channel ChipFET

HFE:200-400

NPN, Vceo=12V, Ic=100mA, hfe=70~140, silk screen R24

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This device is specifically designed to improve the energy efficiency of DC-DC converters. Using novel techniques in the MOSFET structure, the individual components of gate charge and capacitance are optimized to reduce switching losses. Low gate resistance and very low Miller charge enable superior performance in adaptive and fixed dead-time gate drive circuits. Very low rDS(on) is maintained, providing a sub-logic level device.