Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 30A Power (Pd): 34W On-Resistance (RDS(on)@Vgs,Id): 52mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 9.8nC@10V Input capacitance (Ciss@Vds): 1.45nF@30V, Vds=60V Id=30A Rds=52mΩ, operating temperature : -55℃~+150℃@(Tj);

-12 V, -7.7 A, ?Cool, single P-channel, 2x2 mm, WDFN encapsulation

Type N Drain-Source Voltage (Vdss) 60 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 11.3 On-Resistance (mΩ) 9 Input Capacitance (Ciss) 1225 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 20.6

N-channel, 30V, 25A, 23mΩ@4.5V

PNP, Vceo=-40V, Ic=-200mA

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -5.6 VGS(th)(v) -0.5 RDS(ON)(m?)@4.88V 42 Qg(nC) @4.5V 12.1 QgS(nC) 1.5 Qgd(nC) 3.1 Ciss(pF) 938 Coss(pF) 108 Crss(pF) 96