Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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Motor drive module IGBT 5A, 600 V
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UMW (Friends Taiwan Semiconductor)
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FUXINSEMI (Fuxin Senmei)
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REASUNOS (Ruisen Semiconductor)
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Ruichips (Ruijun Semiconductor)
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NPN, Vceo=45V, Ic=500mA, hfe=250~600
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Littelfuse (American Littelfuse)
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Infineon (Infineon)
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TI (Texas Instruments)
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P-Channel NexFET Power MOSFET, CSD22202W15 9-DSBGA -55 to 150
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CBI (Creation Foundation)
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This NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
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CJ (Jiangsu Changdian/Changjing)
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ST (STMicroelectronics)
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