Triode/MOS tube/transistor/module

30V, -30V/3.7A, -2.7A/N+P

NPN, Vceo=120V, Ic=800mA, hfe=120~240

-

P-channel,-30V,-45A, 0.0087Ω@-10V

N-channel, 30V, 2.6A, 98mΩ@2.5V

P-channel 200V 1.8A

NPN Vceo=45V Ic=100mA

MOS tube type: P channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 4.2A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 65mΩ@10V, 4.2A Threshold Voltage (Vgs(th)@Id): 30V@250uA Input Capacitance (Ciss@Vds): 880pF@15V Operating Temperature: -55~+150℃@(Tj)

N-channel, 650V, 1.2?@10V, 7.0A