Triode/MOS tube/transistor/module

The low RDS(on) of these small surface-mount MOSFETs ensures minimal power loss and energy savings, making these devices suitable for space-sensitive power management circuits.

Interface - Driver, Receiver, Transceiver 8/0

Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat)@Ic,Ib ): 400mV@50mA, 5mA DC current gain (hFE@Ic, Vce): 100@10mA, 1V Characteristic frequency (fT): 250MHz Operating temperature: +150℃@(Tj)

N+P channel MOS

Semiconductor Transistor Field Effect Transistor MOS tube, SOT-23, N channel, withstand voltage: 30V, current: 6A, 10V internal resistance (Max): 0.025Ω, 4.5V internal resistance (Max): 0.038Ω, power: 1.5W

NPN Darlington Transistor This device is suitable for collector currents up to 500 mA where very high current gain is required. From Process 03.