Triode/MOS tube/transistor/module

YJG90N04A-F1-0100HF

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -100V, current: -20A, 10V internal resistance (Max): 0.11Ω, 4.5V internal resistance (Max): 0.13Ω, power: 50W

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 6 ID(A)Max. 0.3 VGS(th)(v) - RDS(ON)(m?)@4.17V 800 Qg(nC)@4.5 V 3 QgS(nC) 1 Qgd(nC) 0.8 Ciss(pF) - Coss(pF) - Crss(pF) -

This P-channel 1.8V specified MOSFET is a rugged gate version of the advanced PowerTrench process. It is optimized for power management applications with wide gate drive voltage ratings (1.8V – 8V).