Triode/MOS tube/transistor/module

Triode Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 150V Collector Current (Ic): 500mA Power (Pd): 500mW DC Current Gain (hFE@Ic,Vce): 80@10mA,5V 100-200 PNP ,Vceo=-150V,Ic=-0.5A silk screen 2L

P-channel, VDSS withstand voltage 20V, ID current 5A, RDON on-resistance 45mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.4-1.0V,

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -5.5 VGS(th)(v) -1.75 RDS(ON)(m?)@4.103V 100 Qg(nC) @4.5V 12.4 QgS(nC) 2.2 Qgd(nC) 6.3 Ciss(pF) 1137 Coss(pF) 76 Crss(pF) 50

N-channel, 100V, 137A, 7.5mΩ@10V

N-channel, 60V, 24A, 33mΩ@10V

P+N channel, 20V