Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -2.5 VGS(th)(v) -0.7 RDS(ON)(m?)@4.41V 135 Qg(nC) @4.5V 3 QgS(nC) 0.5 Qgd(nC) 0.8 Ciss(pF) 290 Coss(pF) 60 Crss(pF) 34

NPN, Vceo=700V, Ic=4A

P-channel, -20V, -2.7A, 80mΩ@-4.5V

N-channel, 40V, 4.6A, 37mΩ@10V

This Darlington bipolar power transistor is suitable for general purpose amplifiers, low frequency switching, and motor control applications. MJH11017, MJH11019, MJH11021 (PNP); MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.

N-channel, 240V, 0.2A, 4Ω@10V

N-channel, 30V, 18A, 3.9mΩ@10V

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 180V Collector current (Ic): 15A Power (Pd): 130W Collector cut-off current (Icbo): 100uA Collector-emitter saturation voltage (VCE(sat) @Ic,Ib): 2V@5A, 500mA Characteristic frequency (fT): 20MHz Operating temperature: +150℃@(Tj)

N-channel, 60V, 75A, 12mΩ@10V