Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -400V Collector current (Ic): -200mA Power (Pd): 350mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@50mA,

N-channel, 20V, 6A, 28mΩ@4.5V

SMD Transistor Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW DC Current Gain (hFE@Ic,Vce): 250@100mA, 1V 250~ 600 PNP, Vceo=-45V, Ic=-0.5A, hfe=250~600

P-channel, -20V, -1.5A, 145mΩ@4.4V

ON Semiconductor's Field Stop IGBTs utilize a new field stop IGBT process for applications such as solar inverters, UPS, welding machines, and PFC where low conduction and switching losses are critical.

P-channel, -30V, -30A, 28mΩ@10V

Drain-source voltage (V) 50 Continuous drain current (Id) (A) 0.34 Threshold voltage (V) 1.6 Power (W) 0.35 On-resistance 10V (Ω) 2500 Input capacitance (pF) 17.5