Triode/MOS tube/transistor/module

Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 28 On-Resistance (mΩ) 1.9 Input Capacitance (Ciss) 2800 Reverse Transfer Capacitance Crss (pF) 140 Gate Charge (Qg ) 44.5

MMDT2907A-F2-0000HF

Double NPN/PNP

Automotive power MOSFETs for compact and energy efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 50A Power (Pd): 58W On-resistance (RDS(on)Max@Vgs,Id): 7.3mΩ@10V, 25A

N-channel, 600V, 7.5A, 1.2Ω

N tube, 20V, 4.3A, open 0.79V, 24mΩ@4.5V 20mΩ@10V

Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=4.7K R2=4.7K

N-channel, 600V, 800mA, 11Ω@10V