Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 4.4 VGS(th)(v) 0.85 RDS(ON)(m?)@4.25V 50 Qg(nC)@4.5V 6.4 QgS(nC) 0.54 Qgd(nC) 1.25 Ciss(pF) 382 Coss(pF) 41 Crss(pF) 33

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 500mA Power (Pd): 300mW

N-MOS tube 30V150A

PNP, Vcc=-50V, Iout=-20mA, Pd=200mW

Pre-biased PNP 50V 100mA