Triode/MOS tube/transistor/module
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113 contain a GaAs infrared emitter optically coupled to a silicon planar Darlington amplifier.
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N channel.20V.12A.10mΩ
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Cmos (Guangdong Field Effect Semiconductor)
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PAKER (Parke Micro)
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Configuration Single Type N-Ch VDS(V) 80 VGS(V) 25 ID(A)Max. 200 VGS(th)(v) 3 RDS(ON)(m?)@4.464V - Qg(nC)@4.5V - QgS(nC) 31 Qgd(nC) 75 Ciss(pF) 8154 Coss(pF) 1029 Crss(pF) 650
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ST (STMicroelectronics)
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ST (STMicroelectronics)
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N-channel, 60V, 18A, 73mΩ@10V
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DIODES (US and Taiwan)
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Infineon (Infineon)
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