Triode/MOS tube/transistor/module

PNP

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 10A On-Resistance (RDS(on)@Vgs,Id): 10mΩ@10V, 11.5mΩ@4.5V, Threshold Voltage (Vgs (th)@Id): 0.9V to 1.8V VDS=VGS, ID=250μA

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 500mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 120@50mA, 1V NPN 25V 0.5A 0.3 W 150MHz hfe:120-400 S8050 H file 200-350

NPN, Vceo=50V, Ic=2A

This high voltage NPN bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

P groove -30V -2.6A

N channel