Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -12 VGS(V) 8 ID(A)Max. -9.4 VGS(th)(v) - RDS(ON)(m?)@4.136V 15 Qg(nC)@ 4.5V 15.5 QgS(nC) 2.3 Qgd(nC) 4.6 Ciss(pF) 1400 Coss(pF) 297 Crss(pF) 237

N channel

CSD87381P Synchronous Buck NexFETTM Power Block, CSD87381P

MOS tube type: N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 6.8A Power (Pd): 1.2W On-resistance (RDS(on)@Vgs,Id): 18mΩ@4.5V ,6.8A Threshold voltage (Vgs(th)@Id): 1.0V@10uA

NPN, Vceo=80V, Ic=1A, hfe=100~250

N-channel, Vces=500V, Ic=28A

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

Configuration N+P Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -5.8 VGS(th)(v) -0.6 RDS(ON)(m?)@4.327V 55 Qg( nC)@4.5V 10.1 QgS(nC) 1.21 Qgd(nC) 2.46 Ciss(pF) 677 Coss(pF) 82 Crss(pF) 73

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±20 Vth(V) 0.7-1.2 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 3

This device is intended for use in general-purpose medium power amplifiers and switching circuits requiring up to 1.2 A collector current. From Process 38.