Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 110A Power (Pd): 73.5W On-Resistance (RDS(on)@Vgs,Id: 2.2mΩ@10V, 20A Threshold Voltage (Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 22.7nC@10V Input capacitance (Ciss@Vds): 1.90nF@20V , Vds=40v Id=110A Rds=2.2mΩ, Working temperature: -55℃~+150℃@(Tj)

N-channel, 20V, 0.9A, 300mΩ@4.5V

PNP for low frequency amplification, Vceo=100V, Ic=5A

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

General materials (low voltage MOSFET power supply, energy storage power supply, etc.), Vds=40V Id=55A Rds=5.7mΩ (8.0mΩ maximum) DFN5x6encapsulation;

This P-channel MOSFET is a rugged gate version of the advanced PowerTrench process. It is optimized for power management applications requiring wide gate drive voltage ratings (4.5V – 25V).

N-channel, 100V, 5.6A, 540mΩ@10V

N-channel, 75V, 148A, 5.5mΩ@10V

Dual N-channel 30V 4.9A

This N-channel MOSFET is designed to increase the overall energy efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.

NPN 140V 2A