Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 120 VGS(V) 20 ID(A)Max. 75 VGS(th)(v) 3 RDS(ON)(m?)@4.224V - Qg(nC)@4.5V - QgS(nC) 17.4 Qgd(nC) 14.1 Ciss(pF) 4282 Coss(pF) 429 Crss(pF) 17

PNP, Vceo=80V, Ic=8A

DTA113ZCA-F2-0000HF

NPN, Vceo=400V, Ic=300mA

N-channel 20V

ON Semiconductor's new Field Stop Gen 2 IGBT series features novel field stop IGBT technology for applications such as solar inverters, UPS, welding machines, telecom, ESS, and PFC where low conduction and switching losses are critical.

N-channel, 600V, 1.7A, 3.3Ω@10V

CSD19535KCS 100V, N-Channel NexFET™ Power MOSFET, CSD19535KCS

NPN, Vceo=50V, Ic=150mA

N-channel, 60V, 12A, 12mΩ@10V