Triode/MOS tube/transistor/module
Infineon (Infineon)
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DIODES (US and Taiwan)
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P-channel, -30V, -12A
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N channel + P channel
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TI (Texas Instruments)
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HXY MOSFET (Huaxuanyang Electronics)
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IC(A) -0.6 VCEO(V) -150 hFE(β) 100-300 fT(MHZ) 100 VCBO(V) -160 VCE(sat)(W) -0.5 Type PNP
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TECH PUBLIC (Taizhou)
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BSP613P high turn-on standard Vth: 3.0
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PMOS -20V -600mA RDS(on)=650mΩ WITH ESD SOT-883
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Littelfuse (American Littelfuse)
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Xiner (Core Energy Semiconductor)
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This 4.0 A, 60 V, PNP bipolar power transistor is suitable for lower power audio amplifiers and low current high speed switching applications. The BD787 and BD788 are complementary devices.
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