Triode/MOS tube/transistor/module

100V, 9.6A N-channel, Rds=108mΩ(typ)@10V

ON Semiconductor's new field-stop IGBT family uses new field-stop IGBT technology to deliver optimal performance for automotive chargers, inverters, and other applications that require low conduction and switching losses.

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 120 VGS(th)(v) 1.6 RDS(ON)(m?)@4.207V 2 Qg(nC)@4.5V - QgS(nC) 12 Qgd(nC) 18.5 Ciss(pF) 3972 Coss(pF) 1119 Crss(pF) 82

CSD18503Q5A 40V, N-Channel NexFET MOSFET™, Single SON5x6, 4.3mΩ

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PNP 200W -90V- 30A Applications: Designed for output devices of complementary audio amplifiers with 100 watts of music power per channel

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 25 ID(A)Max. -90 VGS(th)(v) -1.8 RDS(ON)(m?)@4.234V 8.6 Qg(nC) @4.5V 70 QgS(nC) 10 Qgd(nC) 18 Ciss(pF) 3200 Coss(pF) 640 Crss(pF) 600