Triode/MOS tube/transistor/module
Agertech (Agertech)
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NPN, Vceo=50V, Ic=150mA
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TECH PUBLIC (Taizhou)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 55 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 7/8.2 Continuous Drain Current ID (A) 110
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Infineon (Infineon)
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DIODES (US and Taiwan)
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Infineon (Infineon)
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RealChip (Shenxin Semiconductor)
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P-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 18A Power (Pd): 72W On-resistance (RDS(on)Max@Vgs,Id): 110mΩ@10V, 10A
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DIODES (US and Taiwan)
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