Triode/MOS tube/transistor/module

Semiconductor Transistor Field Effect Transistor MOS tube, TO-3P, N channel, withstand voltage: 100V, current: 160A, 10V internal resistance (Max): 0.0045Ω, power: 350W

MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.5-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 3

N-channel, 30V, 3.4A, 63mΩ@4.5V

N-channel 100V 11.5A

Type N VDSS(V) 20 ID@TC=33?C(A) 0.75 PD@TC=33?C(W) 0.15 VGS(V) ±10 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.13V 350

P groove -30V -1.9A

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 80V Collector Current (Ic): 1A Power (Pd): 900mW