Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

The MJE170/180 series are suitable for low power audio amplifier and low current high speed switching applications. MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.

PNP, Vceo=-65V, Ic=-0.1A

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Low VCE(sat) bipolar transistors are miniature surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control.