Optocoupler/LED/nixie tube/photoelectric device

The CNY17XM, CNY17FXM, and MOC810XM devices consist of a Gallium Arsenide infrared light-emitting diode coupled to an NPN phototransistor with dual-row plug-inencapsulation.

The FOD3182 is a 3-A output current, high-speed MOSFET gate driver optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with a circuit power stage integrating PMOS and NMOS output power transistors. It is suitable for high frequency driving of power MOSFETs used in plasma display panels (PDP), motor control inverter applications and high performance DC-DC converters. The device is encapsulated in an 8-pin dual-wire inner case and is compatible with 260°C reflow processes for leadless soldering machine compliance.

The FOD814 consists of two Gallium Arsenide infrared emitting diodes in a 4-pin dual-wire encapsulation, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series includes a Gallium Arsenide Infrared Emitting Diode driving a Silicon Phototransistor within a 4-pin 2-in-line encapsulation.