Optocoupler/LED/nixie tube/photoelectric device

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector in a small surface mountable plastic encapsulation. They are ideal for high-density applications and do not require board mounting.

The H11AAXM series consists of two GaAs infrared emitting diodes connected in anti-parallel to drive a single silicon phototransistor output.

The FOD8173 series utilizes a stretched body 6-pin small plastic encapsulation consisting of a gallium aluminum arsenide (AlGaAs) light-emitting diode and a CMOS detector IC that includes an integrated photodiode, a high-speed transimpedance amplifier, and a totem-pole output Driver's voltage comparator. Its electrical and switching characteristics are guaranteed over the extended industrial temperature range of -40°C to 100°C and a VDD range of 3 V to 5.5 V.