Optocoupler/LED/nixie tube/photoelectric device

The FOD814 consists of two Gallium Arsenide infrared emitting diodes in a 4-pin dual-wire encapsulation, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series includes a Gallium Arsenide Infrared Emitting Diode driving a Silicon Phototransistor within a 4-pin 2-in-line encapsulation.

The FOD2741 opto-isolated amplifier includes the popular KA431 precision programmable shunt voltage reference and optocoupler. The optocoupler is a gallium arsenide (GaAs) light-emitting diode optically coupled to a silicon phototransistor. It has 3 levels of reference voltage with tolerance = 2%, 1% and 0.5%. The range of current transfer ratio (CTR) is 100%-200%. It also has an outstanding temperature coefficient of 50 ppm/°C. It is primarily used as an error amplifier/reference voltage/optocoupler in isolated AC-to-DC power supplies and DC/DC converters. When using the FOD2741, power supply designers can reduce the number of components and save space in tight encapsulation designs. Tight tolerance references make adjustments unnecessary in many applications. The device features an 8-pin DIP white encapsulation.

The H11FXM series consists of an AlGaAs infrared emitting diode coupled to a symmetrical bi-directional silicon photodetector. The detector is galvanically isolated from the input like an ideally isolated FET, suitable for distortion-free control of low-level AC and DC analog signals. The H11FXM series devices are installed in a two-wire in-capsulation.

The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high-speed phototransistor. A separate connection for photodiode biasing reduces the base-collector capacitance of the input transistor and is orders of magnitude faster than conventional phototransistors. The HCPL4503M has no internal connection to the phototransistor base, improving noise immunity. Internal interference shielding provides excellent common-mode rejection up to 50,000 V/µs.