Triode/MOS tube/transistor/module

N-channel, 100V, 110A, 9mΩ@10V

Polarity NPN Dissipated Power (W) 0.2 Maximum Collector Current (mA) 800 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 800/80 Maximum operating frequency (MHz) 150

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS processes. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFETs have excellent body diode reverse recovery performance. Its trr is less than 50nsec, and its reverse dv/dt immunity is 20V/nsec, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications that require improved performance from the MOSFET's body diode, the UniFET Ultra FRFET MOSFET can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

These N-channel logic level power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. They are suitable for logic level (5V) drive power supplies in applications such as programmable controllers, automotive switches, switching regulators, motor relay drivers, and transmitter switches for bipolar transistors. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias in the 3V to 5V range, thus enabling true switching power supply control directly in the logic circuit supply voltage. The previous development model was TA09871.

P channel -20V -2.8A