Triode/MOS tube/transistor/module

triac

Gallium Nitride GaN 650V Power Transistor(FET)

Gallium Nitride GaN 650V Power Transistor(FET)

N-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 200A Power (Pd): 250W On-resistance (RDS(on)Max@Vgs,Id): 3.1mΩ@10V, 50A

N-channel,.30V,120A

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. Such transistors can be run directly in integrated circuits. The previous development model was TA78440.

YJSD12N03A-F2-0000HF

N-channel 60V 13A