Triode/MOS tube/transistor/module

Drain-source voltage (Vdss): -30V Continuous drain current (Id): -4A Power (Pd): 1.25W On-resistance (RDS(on)@Vgs,Id): 46mΩ@10V,4A

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 14 VGS(th)(v) 2 RDS(ON)(m?)@4.162V 160 Qg(nC)@4.5V - QgS(nC) 1.5 Qgd(nC) 1.1 Ciss(pF) 350 Coss(pF) 28.9 Crss(pF) 1.4

Type N+N VDSS(V) 30 ID@TC=55?C(A) 2 PD@TC=55?C(W) 1.1 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.35V 106

N-channel, 100V, 110A, 0.0042Ω@10V