Triode/MOS tube/transistor/module

MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1.1-2.2 On-Resistance RDS(ON) (mΩ) 24/29 Continuous Drain Current ID (A) 30

P-channel, 100V, 11A

P+N double channel, 40V/22.1A, -40V/-18.6A

P-channel, 40V, 42A

Transistor type: NPN, collector-emitter breakdown voltage (Vceo): 50V collector current (Ic): 100mA R1=10K R2=10K

Automotive power MOSFETs. 20V 3.2A 80 mΩ single N-channel, SOT-23, logic level. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

Type PNP IC(A) -0.2 VCBO(V) -40 VCEO(V) -40 VEBO(V) -5 VCE(sat)(V) -0.4

N-channel, 1700V, 2.6A