Triode/MOS tube/transistor/module

PNP bipolar transistors are spin-offs of our popular SOT23, SOT323, SOT563, SOT963 three-lead devices. The device is suitable for general amplifier applications and comes in a SOT1123 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

N channel

The MJE/MJF18008G features an application specific advanced die for 220 V line powered switch mode power supplies and electronic lamp ballasts.

MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA