Triode/MOS tube/transistor/module

NPN,Vceo=40V,Ic=0.2A

NPN, Vceo=160V, Ic=600mA

P-channel 30V 6.5A

N-channel, 60V, 45A, 27mΩ@10V

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 6A Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 27mΩ@ 4.5V,3A

This N-channel enhancement mode MOSFET is produced using trench MOSFET technology with high cell density. This very high density process minimizes on-resistance, provides robust and reliable performance and fast switching. The BSS84 can be used in most applications requiring up to 0.13 A DC with minimal losses and can deliver up to 0.52 A. This product is especially suitable for low voltage applications requiring low current high side switches.

PNP, Vceo=40V, Ic=0.2A, hfe=100~300