Triode/MOS tube/transistor/module

N-channel, 800V, 4A, 3Ω@10V

Utilizing a robust, cost-effective field-stop II Trench structure, this Insulated Gate Bipolar Transistor (IGBT) provides excellent performance for demanding switching applications, offering low on-state voltage and minimizing switching losses. This IGBT is ideal for UPS and solar applications. The device combines a soft and fast combined encapsulation freewheeling diode with low forward voltage.

N-channel, 30V, 260A, 3Ω@10V

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 18.2A On-resistance (RDS(on)@Vgs,Id): 73mΩ@10V, 18.2A

N-channel 600V 23A 158mΩ@12A

P+P channel, -20V, -8.9A, 18mΩ@-4.5V