Triode/MOS tube/transistor/module
This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.
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Infineon (Infineon)
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CJ (Jiangsu Changdian/Changjing)
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CJ (Jiangsu Changdian/Changjing)
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Infineon (Infineon)
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P-channel, -30V, -50A, 13mΩ@10V
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FUXINSEMI (Fuxin Senmei)
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CJ (Jiangsu Changdian/Changjing)
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N-channel, 30V, 5A, 42mΩ@10V
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UMW (Friends Taiwan Semiconductor)
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N-channel, 100V, 15A, 114mΩ@10V
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Infineon (Infineon)
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UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
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DIODES (US and Taiwan)
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