Triode/MOS tube/transistor/module

N-channel, VDSS withstand voltage 50V, ID current 500mA, RDON on-resistance 2R@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-3.0V,

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

NPN 40V 0.6A

Transistor type: 1 NPN- Pre-biased Power (Pd): 150mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 1.4V@1mA, 0.3V Maximum input voltage (VI(off)@ Ic/Io, Vce/Vcc): 300mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@5mA, 0.25mA DC current gain (hFE@Ic, Vce): 68@5mA, 5V