Triode/MOS tube/transistor/module

P channel

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 40V, current: 80A, 10V internal resistance (Max): 0.0033Ω, 4.5V internal resistance (Max): 0.0048Ω, power: 160W

P-channel, -60V, -6A, 49mΩ@10V

HFE:100-250

Type N VDS(V) 100V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 96mΩ ID(A) 15A

This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

Automotive Power MOSFETs for compact and efficient designs mounted in 3x3mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.