Triode/MOS tube/transistor/module

P-channel,-20V,-1.37A,-83mΩ@-4.5V

N-channel, 250V, 10.9A, 165mΩ@10V

MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA

N channel

This N-channel MOSFET is designed to increase the overall efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

Thyristor (SCR)/module 75A Standard SCRs IT(RMS):75A VGT: 1.3V VDRM VRRM:1600V TJ:-40-150℃