Triode/MOS tube/transistor/module

N-channel, 20V, 25A

P-channel, -30V, -6A, 80mΩ@-4.5V

On-state input voltage (VI(on)@Vce,Ic): 3V@2V, 300mA Collector-emitter saturation voltage drop (VCE(sat)@Ii,Ic): 1.1V@500uA, 350mA Output leakage current (Icex@Vce ): 50uA@50V On-state input current (Ii@Vi): [email protected] Off-state input current (Ii(off)@Vce,Ic): 100uA@500uA Clamp diode leakage current (IR@VR): 50uA@ 50V clamping two

This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.

N channel

Type P VDSS(V) 30 VGS(V) 12 VTH(V) 0.4 IDS38°C(A) 4 RDS(Max) 60 PD38°C(W) 1.25

NPN

N-channel, Vds=20V