Triode/MOS tube/transistor/module

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

P channel -30V -12A

P groove -16V -4A

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW 200~450 NPN, Vceo=65V, Ic=0.1A, silk screen 1B

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.