Triode/MOS tube/transistor/module

Voltage VDSS650V, conduction resistance Rds0.96 ohms, charge Qg44nC, current ID10A

N-channel 100V 94A

These dual N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process minimizes on-resistance, provides rugged, reliable performance and fast switching. These devices are especially suitable for low-voltage applications requiring low-current high-side switching.

N-channel 700V 10A

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Power MOSFET, 20 V/?20 V, 4.6 A/?4.1 A, complementary, 2x2 mm, WDFN encapsulation