Triode/MOS tube/transistor/module

UniFETTM II MOSFETs are a family of high voltage MOSFETs based on advanced planar stripe and DMOS technologies. This advanced MOSFET family has the lowest on-resistance among planar MOSFETs while providing excellent switching performance and higher avalanche energy strength. Additionally, an internal gate supply ESD diode enables the UniFET II MOSFET to withstand HBM surge stress above 2kV. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The MC1413, B with 2.7 kΩ series input resistors is suitable for systems using 5.0 V TTL or CMOS logic.

This PNP bipolar power transistor is suitable for high power amplifier and switching amplifier applications. 2N3055 (NPN) and MJ2955 (PNP) are complementary devices.

This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.