Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, TO-251A, P channel, withstand voltage: -60V, current: -35A, 10V internal resistance (Max): 0.033Ω, 4.5V internal resistance (Max): 0.04Ω, power: 90W

NPN, Vceo=45V, Ic=1.5A, hfe=160~400

Crystal array device with rated 50V/500mA drive capability

N-channel, Vds=20V

Dual Transistor NPN/PNP

Dual Transistor NPN/PNP

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 100@10mA,1V