Triode/MOS tube/transistor/module

MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.35/0.6/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 60

MOSFET Type P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 10/13 Continuous Drain Current ID (A) 40

MOSFET Type P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 5.8/7 Continuous Drain Current ID (A) 80

MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1.2-2.5 On-Resistance RDS(ON) (mΩ) 15/18 Continuous Drain Current ID (A) 7

MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 2.1/2.4 Continuous Drain Current ID (A) 180

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 0.6-2.0 On-Resistance RDS(ON) (mΩ) 19.5/25 Continuous Drain Current ID (A) 25

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 65/85 Continuous Drain Current ID (A) 6

This N-channel MOSFET is designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.

P tube, -30V, -5A, open -1.55V, 40mΩ@-10V, 58mΩ@-4.5V

N-channel 23A, 500V

Vceo=20V, Ic=5A, hfe=180~390, silk screen AHR