Triode/MOS tube/transistor/module

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

Current 500MA Voltage 45V Magnification 100-250

P-channel, VDSS withstand voltage 30V, ID current 50A, RDON on-resistance 13mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Pre-biased, NPN+PNP, Vceo=40V, Ic=100mA

The MBT3904DW1 and MBT3904DW2 devices are spin-offs of our popular SOT-23/SOT-323 three-lead devices. This dual NPN bipolar transistor is suitable for general purpose amplifier applications and comes in a SOT-363 six-lead surface mount encapsulation. By putting two discrete devices into one encapsulation, these devices are suitable for low-power surface-mount applications where board space is at a premium.

N-channel, 30V, 32A, 2.1mΩ@10V

P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150

UniFETTM II MOSFETs are a family of high voltage MOSFETs based on advanced planar stripe and DMOS technologies. This advanced MOSFET family has the lowest on-resistance among planar MOSFETs while providing excellent switching performance and higher avalanche energy strength. In addition, internal gate supply ESD diodes allow the UniFET II MOSFETs to withstand HBM surge stress above 2kV. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.